深圳市中立信电子科技有限公司

QORVO Back to page 型号 描述 频率值 MHz 频率值 MHz 类型 增益 dB OP1dB dBm Psat dBm NF dB PAE % 漏极效率 % VD V Idq mA 测量条件 封装类型 QPD0030 45 Watt, 48 Volt, DC - 4 GHz GaN RF Power Transistor DC 4,000 22.3 46.9 71.5 48 85 QFN QPD0050 DC - 3.6 GHz, 75 Watt, 48 V GaN RF Power Transistor DC 3,600 22.5 48.7 80 48 130 QPD0060 DC - 3.6 GHz, 90 Watt, 48 V GaN RF Power Transistor DC 3,600 25 49.5 73 48 150 QPD1000 0.03 - 1.215 GHz, 15 Watt, 28 V GaN RF Input-Matched Transistor 30 1,215 19 43.8 78.2 28 50 DFN QPD1003 1.2 - 1.4 GHz, 500 Watt, 50 Volt, GaN RF IMFET 1,200 1,400 19.9 57.3 66.7 50 750 RF-565 QPD1004 30 - 1200 MHz, 25 Watt, 50 V GaN RF Input-Matched Transistor 30 1,200 20.8 73.2 50 50 DFN QPD1008 DC - 3.2 GHz, 125 Watt, 50 Volt GaN RF Power Transistor DC 3,200 > 17 52 70 50 260 NI-360 QPD1008L DC - 3.2 GHz, 125 Watt, 50 Volt GaN RF Power Transistor DC 3,200 > 17 52 70 50 260 NI-360 QPD1009 DC - 4 GHz, 15 Watt, 50 V GaN RF Transistor DC 4,000 24 42.3 72 50 26 QFN QPD1010 DC - 4 GHz, 10 Watt, 50 V GaN RF Transistor DC 4,000 24.7 40.4 70 50 18 QFN QPD1011 7 Watt, 50 Volt, 0.03 - 1.2 GHz, GaN RF Input-Matched Transistor 30 1,200 21 39.4 60 50 20 DFN / SMT QPD1013 DC - 2.7 GHz, 150 Watt, 65 V GaN RF Transistor DC 2,700 21.8 64.8 65 240 DFN QPD1014 15 Watt, 50 Volt, 0.03 - 1.2 GHz, GaN RF Input-Matched Transistor 300 1,200 18.4 41 69.5 50 25 DFN QPD1015 DC - 3.7 GHz, 65 Watt, 50 V GaN RF Power Transistor DC 3,700 20 48.5 74 50 65 NI-360 QPD1015L DC - 3.7 GHz, 65 Watt, 50 V GaN RF Power Transistor DC 3,700 20 48.5 74 50 65 NI-360 QPD1016 500 Watt, 50 Volt, DC - 1.7 GHz, GaN RF Transistor DC 1.7 23.9 58.3 77.4 50 1,000 NI-780 QPD1017 3.1 - 3.5 GHz, 450 Watt, 50 V GaN RF IMFET 3,100 3,500 16.5 56.6 60 50 750 RF-565 QPD1018 500 Watt, 50 Volt, 2.7 - 3.1 GHz, GaN RF IMFET 2,700 3,100 17.7 57.6 67.9 50 750 RF-565 QPD1019 500 Watt, 50 Volt, 2.9 - 3.3 GHz, GaN RF IMFET 2,900 3,300 15.5 57.7 67 50 750 RF-565 QPD1020 30 Watt, 50 Volt, 2.7 - 3.5 GHz, GaN RF Input-Matched Transistor 2.7 3.5 18.4 45 64 50 52.5 DFN QPD1022 DC - 12 GHz, 10 Watt, 32 V GaN RF Transistor DC 12,000 24 68.8 32 50 QFN QPD1823 1.8 - 2.4 GHz, 220 Watt, 48 V GaN RF Power Transistor 1,800 2,400 24 53.6 80 48 360 QPD2194 300 Watt, 48 Volt, 1.8-2.2 GHz GaN RF Power Transistor 1.8 2.2 21 55.7 78.8 48 600 NI400 QPD2195 400 Watt, 48 Volt, 1.8 - 2.2 GHz GaN RF Power Transistor 1,800 2,200 19.1 56 75.4 48 720 NI-780 QPD2730 2.575 - 2.635 GHz, 220 Watt, 48 V Doherty GaN RF Power Transistor 2,575 2,635 15.9 53.5 53 48 210 NI-780 QPD2731 2.5 - 2.7 GHz, 110 Watt / 220 Watt, 48 Volt, Asymmetric Doherty 2,500 2,700 16 60 48 220 NI-780 QPD2793 2.62 - 2.69 GHz, 200 Watt, 48 V GaN RF Power Transistor 2,620 2,690 23 53 75 48 360 NI-400 QPD2795 2.5 - 2.7 GHz, 360 Watt,48 V GaN RF Power Transistor 2,500 2,700 22 55.6 72 48 700 NI-780 QPD2796 2.5 - 2.7 GHz, 200 Watt, 48 V GaN RF Power Transistor 2,500 2,700 23 53 72 48 360 QPD3601 3.4 - 3.6 GHz, 180 Watt, 50 Volt GaN RF Power Transistor 3,400 3,600 22 52.6 66 50 420 NI-400 QPD3800 3.4 - 3.8 GHz, 85 Watt, 48 V GaN RF Power Transistor 3,400 3,800 21 49.3 70 50 180 NI-400 RFG1M09090 700 - 1000 MHz, 90 Watt GaN Power Amplifier 865 960 20 51 45 48 300 RF400-2 RFG1M09180 700 - 1000 MHz, 180 Watt GaN Power Amplifier 865 960 20 54 43 48 600 RF400-2 with flange RFG1M20090 1.8 - 2.2 GHz, 90 Watt GaN Power Amplifier 1,800 2,200 14.5 49.5 42 48 300 RF400-2 with flange RFG1M20180 1.8 - 2.2 GHz, 180 Watt GaN Power Amplifier 1,800 2,200 15 52.5 40 48 600 RF400-2 with flange T1G2028536-FL DC - 2 GHz, 285 Watt, 36 V GaN RF Power Transistor DC 2,000 19 54.2 54 36 to 50 576 NI-780 T1G2028536-FS DC - 2 GHz, 285 Watt, 36 V GaN RF Power Transistor DC 2,000 19 54.2 54 36 to 50 576 NI-780 T1G3000532-SM 0.03 - 3.5 GHz, 5 Watt, 32 V GaN RF Input-Matched Transistor 3,000 3,500 15.7 37.5 65 32 25 QFN T1G4004532-FL DC - 3.5 GHz, 45 Watt, 32 V GaN RF Power Transistor DC 3,500 > 19 46.5 52 32 220 NI-360 T1G4004532-FS DC - 3.5 GHz, 45 Watt, 32 V GaN RF Power Transistor DC 3,500 > 19 46.5 52 32 220 NI-360 T1G4012036-FL DC - 3.5 GHz, 120 Watt, 36 - 50 V GaN RF Power Transistor DC 3,500 16 50.8 52 36 to 50 360 NI-360 T1G4012036-FS DC - 3.5 GHz, 120 Watt, 36 - 50 V GaN RF Power Transistor DC 3,500 16 50.8 52 36 to 50 360 T1G4020036-FL DC - 3.5 GHz, 2x120 Watt, 36 - 50 V GaN RF Power Transistor DC 3,500 16 2 x 50.8 52 36 to 50 520 NI-650 T1G4020036-FS DC - 3.5 GHz, 2x120 Watt, 36 - 50 V GaN RF Power Transistor DC 3,500 16 2 x 50.8 52 36 to 50 520 NI-650 T1G6001032-SM DC - 6 GHz, 10 Watt, 32 V GaN RF Power Transistor DC 6,000 19 40 55 32 50 QFN T2G4003532-FL DC - 3.5 GHz, 30 Watt, 32 V GaN RF Power Transistor DC 3,500 16.5 44.5 49 32 150 NI-360 T2G4003532-FS DC - 3.5 GHz, 30 Watt, 32 V GaN RF Power Transistor DC 3,500 16.5 44.5 49 32 150 NI-360 T2G4005528-FS DC - 3.5 GHz, 55 Watt, 28 V GaN RF Power Transistor DC 3,500 16 47.2 52 28 200 NI-360 T2G6000528-Q3 DC - 6 GHz, 7 Watt, 28 V GaN RF Power Transistor DC 6,000 17 40 53 28 50 NI-200 T2G6001528-Q3 DC - 6 GHz, 15 Watt, 28 V GaN RF Power Transistor DC 6,000 15.5 42 72 28 100 NI-200 T2G6001528-SG DC - 6 GHz, 15 Watt, 28 V GaN RF Power Transistor DC 6,000 15.5 42 72 28 100 NI-200 T2G6003028-FL DC - 6 GHz, 30 Watt, 28 V GaN RF Power Transistor DC 6,000 14 45 50 28 200 NI-200 T2G6003028-FS DC - 6 GHz, 30 Watt, 28 V GaN RF Power Transistor DC 6,000 14 45 50 28 200 NI-200 TGF2023-2-01 DC - 18 GHz, 6 Watt Discrete Power GaN on SiC HEMT DC 18,000 18 38 71.6 12 to 32 25 to 125 Die TGF2023-2-02 DC - 18 GHz, 12 Watt Discrete Power GaN on SiC HEMT DC 18,000 21 40.1 73.3 12 to 32 50 to 250 Die TGF2023-2-05 DC - 18 GHz, 25 Watt Discrete Power GaN on SiC HEMT DC 18,000 18 43 78.3 12 to 32 100 to 500 Die TGF2023-2-10 DC - 18 GHz, 50 Watt Discrete Power GaN on SiC HEMT DC 18,000 19.8 47.3 69.5 12 to 32 200 to 1,000 Die TGF2023-2-20 DC - 18 GHz, 100 Watt Discrete Power GaN on SiC HEMT DC 18,000 19.2 50.5 70.5 12 to 32 400 to 2,000 Die TGF2819-FL DC - 3.5 GHz, 100 Watt, 32 - 50 V GaN RF Power Transistor DC 3,500 > 14 51 58 32 to 50 250 NI-360 TGF2819-FS DC - 3.5 GHz, 100 Watt, 32 - 50 V GaN RF Power Transistor DC 3,500 > 14 51 58 32 to 50 250 NI-360 TGF2929-FL DC - 3.5 GHz, 100 Watt, 28 V GaN RF Power Transistor DC 3,500 > 14 50.3 > 50 28 260 NI-360 TGF2929-FS DC - 3.5 GHz, 100 Watt, 28 V GaN RF Power Transistor DC 3,500 > 14 50.3 > 50 28 260 NI-360 TGF2929-HM DC - 3.5 GHz, 100 Watt, 28 V GaN RF Power Transistor DC 3,500 17.4 51.2 72 28 260 NI-360 TGF2933 DC - 25 GHz, 7 Watt, 28 V GaN RF Transistor DC 2,500 15 38.6 57 28 80 die TGF2934 DC - 25 GHz, 14 Watt, 28 V GaN RF Transistor DC 2,500 14 41.5 49 28 160 die TGF2935 DC - 25 GHz, 5 Watt, 28 V GaN RF Transistor DC 2,500 16 36.8 60 28 40 die TGF2936 DC - 25 GHz, 10 Watt, 28 V GaN RF Transistor DC 2,500 16 40 58 28 80 die TGF2941 DC - 25 GHz, 4 Watt, 28 V GaN RF Transistor DC 2,500 16 36 60 28 40 die TGF2942 DC - 25 GHz, 2 Watt, 28 V GaN RF Transistor DC 2,500 18 33.8 59 28 20 die TGF2952 DC - 14 GHz, 7 Watt Discrete Power GaN on SiC HEMT DC 14,000 20.4 38.4 75.7 32 25 Die TGF2953 DC - 12 GHz, 12 Watt Discrete Power GaN on SiC HEMT DC 12,000 18.2 41.2 73.7 32 50 Die TGF2954 DC - 12 GHz, 27 Watt Discrete Power GaN on SiC HEMT DC 12,000 19.6 44.5 71.6 32 100 Die TGF2955 DC - 12 GHz, 40 Watt Discrete Power GaN on SiC HEMT DC 12,000 19.2 46.4 69 32 150 Die TGF2956 DC - 12 GHz, 55 Watt Discrete Power GaN on SiC HEMT DC 12,000 19.3 47.6 69.7 32 200 Die TGF2957 DC - 12 GHz, 70 Watt Discrete Power GaN on SiC HEMT DC 12,000 19.2 48.6 69.6 32 250 Die TGF2965-SM 0.03 - 3 GHz, 5 Watt, 32 V, 50 Ohm GaN RF Input-Matched Transistor 30 3,000 18 37.8 63 32 25 QFN TGF2977-SM DC - 12 GHz, 5 Watt, 32 V GaN RF Transistor DC 12,000 13 37.8 50 32 25 QFN TGF2978-SM DC - 12 GHz, 20 Watt, 32 V GaN RF Transistor DC 12,000 11 42.8 46 32 100 QFN TGF2979-SM DC - 12 GHz, 25 Watt, 32 V GaN RF Transistor DC 12,000 11 43.4 45 32 150 QFN TGF3015-SM 0.03 - 3.0 GHz, 10 Watt, 32 V GaN RF Input-Matched Transistor 30 3,000 17 40.4 63 32 50 QFN TGF3020-SM 4 - 6 GHz, 5 Watt, 32 V, 50 Ohm GaN RF Input-Matched Transistor 4,000 6,000 12.7 38.3 59.6 @ 5GHz 32 25 QFN TGF3021-SM 0.03 - 4.0 GHz, 30 Watt, 32 V GaN RF Transistor 30 4,000 19 45 73 32 65 QFN TQP0102 DC - 4 GHz, 5 Watt GaN Power Transistor DC 4,000 > 19 37 64 32 25 TQP0103 DC - 4 GHz, 15 Watt GaN Power Transistor DC 4,000 > 19 43.5 63 32 70 TQP0104 DC - 4 GHz, 30 Watt GaN Power Transistor DC 4,000 17 44.6 60 32 70