深圳市中立信电子科技有限公司

1 Features

1• Qualified For Automotive Applications

• AEC-Q100 Qualified With the Following Results:

– Device Temperature Grade 1: –40°C to

+125°C TPS79328QDBVRQ1

– Device HBM ESD Classification Level 1C TPS79328QDBVRQ1

– Device CDM ESD Classification Level C2 TPS79328QDBVRQ1

• 200-mA Low-Dropout Regulator With EN TPS79328QDBVRQ1

• Available in 1.8-V, 2.5-V, 2.8-V, 3-V, 3.3-V, 4.75-

V, and Adjustable Options

• High PSRR (70 dB at 10 kHz)

• Ultralow Noise (32 μV)

• Fast Start-Up Time (50 μs)

• Stable With a 2.2-μF Ceramic Capacitor

• Excellent Load and Line Transient

• Very Low Dropout Voltage

(112 mV at Full Load, TPS79330-Q1)

• 5-Pin SOT-23 (DBV) Package

2 Applications

• VCOs

• RF

• Bluetooth™

3 Description

The TPS793xx-Q1 family of low-dropout (LDO) lowpower

linear voltage regulators features high powersupply

rejection ratio (PSRR), ultralow noise, fast

start-up, and excellent line and load transient

responses in a small-outline SOT-23 package. Each

TPS793-Q1 device in the family is stable, with a small

2.2-μF ceramic capacitor on the output. The

TPS793xx-Q1 family uses an advanced, proprietary,

BiCMOS fabrication process to yield extremely low

dropout voltages (for example, 112 mV at 200 mA,

TPS79330-Q1). Each device achieves fast start-up

times (approximately 50 μs with a 0.001-μF bypass

capacitor), while consuming very low quiescent

current (170 μA typical). Moreover, when the device

is placed in standby mode, the supply current is

reduced to less than 1 μA. 

1功能

•符合汽车应用的要求

•AEC-Q100合格，结果如下:

- 1级设备温度:-40°C

+ 125°C

-设备HBM ESD分类等级1C

-设备CDM ESD分类级别C2

•200毫安低辍学率调节器与EN

•在1.8 v,2.5 v,2.8 v,3 v,3.3 v,4.75 -

和可调选项

•高PSRR(10千赫70分贝)

•超低噪音(32μV)

•快速启动时间(50μs)

•稳定2.2 -μf陶瓷电容器

•良好的负载和线路瞬态

非常低的电压

(满载112 mV, TPS79330-Q1)

•5针SOT-23 (DBV)包装

2应用程序

•配装

•射频

•蓝牙™

3描述

TPS793xx-Q1低辍学率(LDO)低功率系列

线性稳压器的特点是高电源

抑制比(PSRR)，超低噪音，快速

启动，良好的线路和负载瞬态

响应在一个小大纲SOT-23包。每一个

TPS793-Q1装置在家庭中是稳定的，带有一个小的

2.2 -μf陶瓷电容器的输出。的

TPS793xx-Q1系列采用先进的专有技术，

BiCMOS制造工艺产量极低

输出电压(例如，200毫安时的112 mV，

TPS79330-Q1)。每台设备实现快速启动

时间(大约50μs 0.001 -μf绕过

，而消耗非常低的静止

当前(170μA典型)。而且，当设备

处于待机模式，电源电流是

减少到小于1μA。