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CSD23202W10 Texas Instruments MOSFET 12V P-channel NexFET Pwr MOSFET
DSBGA-4
1 Channel
P-Channel
- 12 V
相关产品
产品信息
1 Features
Product Summary
1• Ultra-Low Qg and Qgd TA = 25°C TYPICAL VALUE UNIT
• Small Footprint 1 mm × 1 mm VDS Drain-to-Source Voltage –12 V
• Low Profile 0.62-mm Height Qg Gate Charge Total (–4.5 V) 2.9 nC
• Pb Free Qgd Gate Charge Gate-to-Drain 0.28 nC
• Gate ESD Protection – 3 kV VGS = –1.5 V 82 mΩ
Drain-to-Source On- VGS = –1.8 V 67 mΩ
• RoHS Compliant RDS(on) Resistance VGS = –2.5 V 54 mΩ
• Halogen Free
VGS = –4.5 V 44 mΩ
VGS(th) Threshold Voltage –0.60 V
2 Applications
• Battery Management Ordering Information(1)
• Load Switch Device Qty Media Package Ship
• Battery Protection CSD23202W10 3000 7-Inch Reel 1 × 1-mm Wafer Tape and
CSD23202W10T Level Package Reel 250 7-Inch Reel
3 Description (1) For all available packages, see the orderable addendum at
This 12 V, 44 mΩ device is designed to deliver the the end of the data sheet.
lowest on-resistance and gate charge in a small
1 mm × 1 mm outline with excellent thermal