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IPD60R650CE场效应晶体管原裝進口Infineon
Infineon
MOSFET
Si
SMD/SMT
TO-252-3
600 V
相关产品
产品信息
MOSFET
600VCoolMOSaCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:Note1:ForMOSFETparallelingtheuseofferritebeadson
thegateorseparatetotempolesisgenerallyrecommended.
Note2:*6R650CEisFullPAKmarkingonly
Table1KeyPerformanceParameters
Parameter Value Unit
VDS @ Tj,max 650 V
RDS(on),max 650 mΩ
Id. 9.9 A
Qg.typ 20.5 nC
ID,pulse 19 A
Eoss@400V 1.9 μJ
Type/OrderingCode P
场效应晶体管
600年vcoolmosaCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
场效应管,designedaccordingtothesuperjunction(SJ)原理及
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket。
特性
•ExtremelylowlossesduetoverylowFOMRdson * QgandEoss
•Veryhighcommutationruggedness
•Easytouse /驱动
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
应用程序
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,适配器,LCD&PDPTVandindoorlighting。
Pleasenote:注一:ForMOSFETparallelingtheuseofferritebeadson
thegateorseparatetotempolesisgenerallyrecommended。
注2:* 6 r650ceisfullpakmarkingonly
Table1KeyPerformanceParameters
参数值单位
VDS @ Tj，650 V
650 mΩRDS(上),马克斯
9.9 Id。
路上。typ 20.5数控
ID,脉冲19
1.9 Eoss@400VμJ
类型/ OrderingCode P
