深圳市中立信电子科技有限公司

1 Features 2 Applications

1• Drives Two N-Channel MOSFETs with 14-ns • Multi-Phase DC-to-DC Converters with Analog or

Adaptive Dead Time Digital Control

• Wide Gate Drive Voltage: 4.5 V Up to 8.8 V With • Desktop and Server VRMs and EVRDs

Best Efficiency at 7 V to 8 V • Portable and Notebook Regulators

• Wide Power System Train Input Voltage: 3 V Up • Synchronous Rectification for Isolated Power

to 27 V Supplies

• Wide Input PWM Signals: 2.0 V up to 13.2-V

Amplitude 3 Description

• Capable to Drive MOSFETs with ≥40-A Current The TPS28225 is a high-speed driver for N-channel

per Phase complimentary driven power MOSFETs with adaptive

dead-time control. This driver is optimized for use in

• High Frequency Operation: 14-ns Propagation variety of high-current one and multi-phase DC-to-DC Delay and 10-ns Rise/Fall Time Allow FSW – 2

converters. The TPS28225 is a solution that provides

MHz high efficiency, small size and low EMI emissions.

• Capable to Propagate <30-ns Input PWM Pulses The efficiency is achieved by up to 8.8-V gate drive

• Low-Side Driver Sink On-Resistance (0.4 Ω) voltage, 14-ns adaptive dead-time control, 14-ns

Prevents dV/dT Related Shoot-Through Current propagation delays and high-current 2-A source and

• 3-State PWM Input for Power Stage Shutdown 4-A sink drive capability. The 0.4-Ω impedance for

the lower gate driver holds the gate of power • Space Saving Enable (Input) and Power Good MOSFET below its threshold and ensures no shoot- (Output) Signals on Same Pin through current at high dV/dt phase node transitions.

• Thermal Shutdown The bootstrap capacitor charged by an internal diode

1•驱动两个n通道mosfts与14 ns•多相dc - dc转换器与模拟或

自适应死时间数字控制

•宽门驱动电压:4.5 V至8.8 V，带有桌面和服务器VRMs和EVRDs

效率在7v至8v•便携式和笔记本调节器

•宽功率系统列车输入电压:3v以上•隔离电源同步整流

至27v电源

•宽输入PWM信号:2.0 V至13.2-V

振幅描述3

•能够驱动mosfet≥40当前n沟道TPS28225是高速的司机

每一阶段驱动功率mosfet与自适应

空时控制。这个驱动程序被优化用于

•高频操作:14 ns的大电流单、多相dc - dc延迟传播变化和10 ns的升/降时间允许FSW - 2

转换器。TPS28225是一个提供的解决方案

MHz效率高、体积小、EMI低。

•能够传播<30 ns的输入PWM脉冲，效率达到8.8 v门驱动器

•下部司机水槽导通电阻(0.4Ω)电压,14-ns 14-ns自适应空时控制

防止dV/dT相关的穿透电流传播延迟和高电流2-A源和

•3状态PWM输入电源级关闭4-A水槽驱动能力。0.4 -Ω阻抗

较低的栅极驱动器控制电源门•节省空间使(输入)和功率良好的MOSFET低于其阈值，并确保通过高dV/dt相节点转换电流在同一引脚上没有发射(输出)信号。